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Combined measurements of steady state photoconductivity
and photoconductivity response time were used to obtain the
drift mobility of majority carriers. There are two conditions
to the method. The first requires single-carrier dominated photocurrent.
In a-Si:H electrons are the dominant photocarrier. The second
is the assumption that the recombination is described by a single
time constant, the free carrier lifetime. Wherever the above-mentioned
conditions hold, photoconductivity is given by,
The drift mobility of the electrons is then obtained
in terms of experimentally measured quantities:
In the first two relations mu, e and G are respectively, the
microscopic mobility, the electronic charge and the electron-hole
generation rate. The quantum efficiency is assumed to be unity.
The response time, tau(r), is determined from the initial slope
of the photodecay curve:

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